EXTRINSIC STACKING FAULTS IN SILICON AFTER HEATING IN WET OXYGEN
- 1 January 1966
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 8 (1), 29-30
- https://doi.org/10.1063/1.1754414
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Fault Planes in Steam-Oxidized SiliconJournal of Applied Physics, 1965
- Two-dimensional defects in silicon after annealing in wet oxygenPhilosophical Magazine, 1965
- Growth of Lattice Defects in Silicon during OxidationJournal of Applied Physics, 1964
- Partial dislocations associated with NbC precipitation in austenitic stainless steelsPhilosophical Magazine, 1964
- The nature of deformation stacking faults in F.C.C. alloysPhilosophical Magazine, 1963
- Surface Damage and Copper Precipitation in SiliconPhysica Status Solidi (b), 1963
- Anomalous electron absorption effects in metal foils: theory and comparison with experimentProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962
- Diffraction contrast of electron microscope images of crystal lattice defects. III. Results and experimental confirmation of the dynamical theory of dislocation image contrastProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962