Negative-Properties for Interstitial Boron in Silicon
- 3 May 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 48 (18), 1271-1274
- https://doi.org/10.1103/physrevlett.48.1271
Abstract
Electrical detection of a single donor level of interstitial boron at eV using novel photo—deep-level transient spectroscopy techniques is reported. Complementary behavior between this level and the acceptor level at eV establishes that the defect levels have negative- ordering. The donor level exhibits a large Poole-Frenkel effect which, when properly accounted for, provides a direct and unambiguous connection to the EPR-identified interstitial boron atom. This represents the first definitive indentification of negative- properties for a defect in any solid.
Keywords
This publication has 14 references indexed in Scilit:
- Oxygen-related donor states in siliconApplied Physics Letters, 1981
- Deep level transient spectroscopy studies of trapping parameters for centers in indium-doped siliconJournal of Applied Physics, 1981
- Interstitial boron in silicon: A negative-systemPhysical Review B, 1980
- Negative-U Properties for Point Defects in SiliconPhysical Review Letters, 1980
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boronPhysical Review B, 1975
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- Electron correlations in narrow energy bandsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1963
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938