The effect of oxygen partial pressure on the properties of RF-sputtered Al2O3 thin films
- 29 February 1984
- journal article
- Published by Elsevier in Materials Letters
- Vol. 2 (3), 196-201
- https://doi.org/10.1016/0167-577x(84)90023-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Prostatic biopsy.BMJ, 1980
- Effect of Oxygen on the rf-Sputtering Rate of SiO2Journal of Vacuum Science and Technology, 1968
- Re-emission Coefficients of Si and SiO2 Films Deposited through rf and dc SputteringJournal of Applied Physics, 1967