Epitaxial Growth of Ba1-XKXBiO3Thin Films by High-Pressure Reactive RF-Magnetron Sputtering
- 1 August 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (8B), L1480
- https://doi.org/10.1143/jjap.30.l1480
Abstract
Epitaxial growth of Ba1-XKXBiO3(110) thin films has been carried out on SrTiO3(110) substrates using reactive rf-magnetron sputtering for the first time under a 80 Pa discharge gas which is of a rather higher pressure than is usual. Electrical measurements showed thatTcof as-grown films was 16 K. A preferred orientation of (110) and epitaxial growth of the Ba-K-Bi-O film on the substrates were confirmed by XRD (X-ray diffraction) and RHEED (reflection high-energy electron diffraction), respectively.Keywords
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