Abstract
A comprehensive study of the energy, temperature, and magnetic field dependence of the anomalous Kondo and spin-flip conductances G(3)(V) and G(2)(V), in vacuum-cleaved metal-semiconductor tunnel junctions is reported. Localized Anderson magnetic moments are characteristic of Schottky barriers at donor concentrations a few times the Mott critical concentration Nc. These moments, coupled to the conduction electrons in the semiconductor by the sd exchange interaction 2JS·σ, are lightly screened neutral donors at the inner edge of the depletion region. The background conductance in vacuum-cleaved junctions on Si: (1.6×1019 cm3 donors) agrees satisfactorily with the parabolic barrier model, extended to the thin-barrier limit. A detailed study shows the energy dependence of the zero-bias Kondo scattering peak G(3)(V) to be in good agreement with the third-order perturbation theory of Kondo and Appelbaum. High magnetic field studies confirm that a large negative g shift Δg=2JρF1.0 and related broadening Γ=π(JρF)2gμBH of the Zeeman transition of the local moment occur via the exchange interaction. The broadening Γ additionally produces, for ΓkBT, a quenching of the Kondo scattering peak from logT to log(ΓkB). The directly measured parameters JρF and E0 determine a divergence temperature TK=(E0kB)×exp(1JρF)=(2±1) °K, significantly higher than an upper bound ∼0.5 °K, indicated by the observed accurate logT dependence of G(3)(0) to 0.4 °K. The discrepancy is removed by assuming simultaneous potential and exchange scattering in a ratio determined via Appelbaum's theory from the observed ratio G(3)G(2). In summary, the tunneling spectra and an extended Kondo-Appelbaum perturbation theory, including the implied g shift, broadening Γ, and an added potential scattering, are in good agreement.