Observation by Auger electron spectroscopy of the effect of hydrogen at a (111) Si-SiO2 interface
- 15 March 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (6), 446-447
- https://doi.org/10.1063/1.91540
Abstract
Recent studies have shown that the Si‐SiO2 interface is the source of an Auger peak at approximately 81–83 eV. Here we present the observation that exposure of a thinly (∼10 Å) oxidized silicon surface to approximately 60 langmuirs of H2 caused the interface‐related Auger peak to disappear. This result may be related to the previously demonstrated hydrogen annealing of both interface states and ESR Pb centers at the interface.Keywords
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