Si-doped GaAs by SiCl4-AsCl3 liquid solution in AsCl3/GaAs-Ga/H2 chemical vapor deposition system

Abstract

We have used SiC1₄/AsC1₃ liquid solutions for Si doping of GaAs epitaxial layers grown using the AsC1₃/GaAs‐Ga/H₂ chemical vapor deposition system. These solutions can be readily prepared with reproducible compositions and can provide excellent doping control. Fine adjustments in the doping level can be achieved by adjusting the H₂ flow rate and by varying the temperature of the SiC1₄/AsC1₃ doping solution. The epitaxial layers doped using this technique have excellent room‐temperature and liquid‐nitrogen mobilities for electron concentrations between 1×10¹⁶ and 8×10¹⁸ cm⁻³. This doping method is particularly useful for the growth as GaAs epitaxial layers for field effect transistor devices.