Growth and characterization of epitaxial cubic boron nitride films on silicon
- 15 March 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (8), 6816-6819
- https://doi.org/10.1103/physrevb.43.6816
Abstract
We report the growth of boron nitride films on (001) faces of silicon using the method of pulsed-excimer-laser ablation. The structure of the deposited films is cubic zinc blende with a lattice constant of 3.619 Å. The films were found to be heteroepitaxial with the cubic BN〈100〉 axes parallel to Si〈100〉, as characterized by x-ray diffraction and high-resolution transmission electron microscopy. We find evidence for an unusual 3:2 commensurate lattice matching.Keywords
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