AlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates
- 11 July 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (2), 94-96
- https://doi.org/10.1063/1.100359
Abstract
We report for the first time large excitonic absorption at room temperature in AlGaAs/GaAs multiple quantum well structures grown on Si substrates in a p-i-n configuration, using photocurrent measurements. We demonstrate an optical reflection modulator which is based on the quantum-confined Stark effect and exciton broadening with a reverse bias voltage applied across the p-i-n structure. A 7.7% change in the reflectivity of the device with 6 V reverse bias voltage was observed. These results demonstrate clearly that optical device quality AlGaAs/GaAs is obtainable directly on Si substrates which has great implications with regard to the monolithic integration of optical III-V and electronic Si technology.Keywords
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