Disturbed Phonon Distribution in Polar Semiconductors

Abstract

The mobility of n‐InSb at cryogenic lattice temperatures is shown to change during approximately 10 nsec after application of a voltage pulse. It increases with time below a certain electric field strength and decreases above this value. This behavior can be understood as resulting from a deviation of the longitudinal optical phonon distribution from its thermal equilibrium; the stationary state being obtained approximately 10 nsec after application of the voltage pulse.