Hot carrier related phenomena for n- and p-MOSFETs with nitrided gate oxide by RTP
- 7 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- On the universality of inversion-layer mobility in n- and p-channel MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Hot-carrier-induced degradation in nitrided oxide MOSFETsIEEE Transactions on Electron Devices, 1989
- Effects of thermal nitridation on the trapping characteristics of SiO2 filmsSolid-State Electronics, 1987
- Surface impact ionization in silicon devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Hot carriers induced degradation in thin gate oxide MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983