Titanium Nitride Crystal Growth with Preferred Orientation by Dynamic Mixing Method
- 1 June 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (6A), L938
- https://doi.org/10.1143/jjap.26.l938
Abstract
Titanium nitride films were produced by dynamic mixing method on four kinds of substrates whose crystal structures differed. By the X-ray diffraction it was observed that the four films had the same preferred orientation. Cross-sectional observation with a transmission electron microscope revealed that an amorphous intermixed layer had formed. The profile of crystal growth on the intermixed layer clearly indicated that the growth started from isotropically oriented small grains and progressed gradually to preferentially oriented columnar grains.Keywords
This publication has 8 references indexed in Scilit:
- Coating Films of Titanium Nitride Prepared by Ion and Vapor Deposition MethodJapanese Journal of Applied Physics, 1985
- Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beamJournal of Applied Physics, 1984
- Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)Applied Physics Letters, 1984
- Mechanisms of reactive sputtering of titanium nitride and titanium carbide II: Morphology and structureThin Solid Films, 1983
- Formation of Cubic Boron Nitride Films by Boron Evaporation and Nitrogen Ion Beam BombardmentJapanese Journal of Applied Physics, 1983
- Optical constants and spectral selectivity of titanium carbonitridesThin Solid Films, 1982
- The plasma-assisted chemical vapour deposition of TiC, TiN and TiCxN1−xThin Solid Films, 1981
- Ion beam deposition of special film structuresJournal of Vacuum Science and Technology, 1981