Photothermal ionization spectroscopy for shallow impurities in ultra-pure silicon
- 1 May 1990
- journal article
- research article
- Published by Springer Nature in International Journal of Infrared and Millimeter Waves
- Vol. 11 (5), 595-630
- https://doi.org/10.1007/bf01023764
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Isotope-Induced Symmetry Change in Dynamic Semiconductor DefectsPhysical Review Letters, 1986
- New oxygen related shallow thermal donor centres in Czochralski-grown siliconSolid State Communications, 1986
- The Study of Oxygen Thermal Donors in Silicon by Photothermal Ionisation SpectroscopyMRS Proceedings, 1985
- High-resolution studies of sulfur- and selenium-related donor centers in siliconPhysical Review B, 1984
- Three Holes Bound to a Double Acceptor:in GermaniumPhysical Review Letters, 1983
- Infrared absorption and Raman spectra of Li-compensated B-doped SiPhysical Review B, 1981
- Physics of ultra-pure germaniumAdvances in Physics, 1981
- High resolution study of the group V impurities absorption in siliconSolid State Communications, 1979
- Photoelectric Spectroscopy – A New Method of Analysis of Impurities in SemiconductorsPhysica Status Solidi (a), 1977
- Far infrared photoconductivity from majority and minority impurities in high purity Si and GeSolid State Communications, 1974