High-frequency noise of InyGa1−yAs/AlxGa1−xAs MODFETs and comparison to GaAs/AlxGa1−xAs MODFETs

Abstract

Noise parameter measurements for recently developed 1 μm gate In_yGa_1−yAs/Al_0.15Ga_0.85As MODFETs have been performed at 8 GHz at room and cryogenic temperatures. Owing to the relatively small C_gs/√g_m ratio in these devices compared to identical conventional GaAs/AlGaAs MODFETs, both room- and cryogenic temperature noise figures have been reduced. In addition, the light sensitivity and drift in noise figure at cryogenic temperatures observed in conventional GaAs/AlGaAs MODFETs have been sub stantially reduced.