Mechanisms of defect pairing in semiconductors: A study for chalcogens in silicon
- 6 April 1987
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (14), 1456-1459
- https://doi.org/10.1103/physrevlett.58.1456
Abstract
Electronic-structure and total-energy calculations are reported for the vacancy and the substitutional and interstitial S, Se, and Te impurities in Si. We identify several mechanisms of impurity-impurity interactions. This theoretical study also serves to determine the dominant defect site of chalcogen pairs as two substitutionals.Keywords
This publication has 7 references indexed in Scilit:
- Identification of Chalcogen Point-Defect Sites in Silicon by Total-Energy CalculationsPhysical Review Letters, 1985
- Theory of electron spin resonance measurements of chalcogen pairs in SiSolid State Communications, 1984
- ESR of selenium pairs (Se+2) in siliconSolid State Communications, 1984
- High-resolution studies of sulfur- and selenium-related donor centers in siliconPhysical Review B, 1984
- Self-consistent impurity calculations in the atomic-spheres approximationPhysical Review B, 1983
- Electronic structure of deep-bonded substitutional impurities in siliconPhysical Review B, 1982
- Paramagnetic Resonance Study of a Deep Donor in SiliconPhysical Review B, 1965