Lattice images of defect-free silicon on sapphire prepared by ion implantation
- 15 September 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (6), 626-628
- https://doi.org/10.1063/1.96094
Abstract
We report for the first time high resolution cross section transmission electron microscopy (HRXTEM) of defect-free silicon on sapphire (SOS) films. These films are prepared from as-grown SOS films by use of multiple ion implantation and annealing sequences. HRXTEM lattice images for both as-grown and processed films are obtained, and correlation with previous ion channeling experiments on this material is discussed.Keywords
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