Low threshold continuous operation of InGaAs/InGaAsP quantum well lasers at ~2.0 μm

Abstract

The first low threshold continuous operation of InGaAs strained layer quantum well lasers at ~2.0 μm is reported. The threshold current density of 5 μm wide and 1.5 mm long ridge waveguide lasers was less than 380 A/cm2. The external differential quantum efficiency of 1 mm long lasers was as high as 15% and laser operation was observed at temperatures as high as 50°C. The lasers are characterised by T0 = 54°C which is the highest characteristic temperature ever achieved at this wavelength in any material system.