Current distribution effects in patterned non-linear magnetoresistive tunnel junctions
- 1 July 2000
- journal article
- Published by Elsevier in Journal of Magnetism and Magnetic Materials
- Vol. 217 (1-3), 231-235
- https://doi.org/10.1016/s0304-8853(00)00236-5
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)Journal of Applied Physics, 1999
- The influence of impurities within the barrier on tunneling magnetoresistanceJournal of Applied Physics, 1999
- Low resistance spin-dependent tunnel junctions deposited with a vacuum break and radio frequency plasma oxidizedApplied Physics Letters, 1999
- Large tunneling magnetoresistance enhancement by thermal annealApplied Physics Letters, 1998
- Current distribution effects in magnetoresistive tunnel junctionsApplied Physics Letters, 1997
- Magnetoresistance Governed by Fluctuations in Ultrasmall Ni/NiO/Co JunctionsPhysical Review Letters, 1997
- Magnetic tunneling applied to memory (invited)Journal of Applied Physics, 1997
- Magnetic tunnel junctions fabricated at tenth-micron dimensions by electron beam lithographyMicroelectronic Engineering, 1997
- Geometrically enhanced magnetoresistance in ferromagnet–insulator–ferromagnet tunnel junctionsApplied Physics Letters, 1996
- Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel JunctionsPhysical Review Letters, 1995