Direct comparison of Mössbauer and channeling studies of implanted119sn in silicon single crystals

Abstract

Mössbauer parameters, measured with a resonance counter, have been compared with channeling results on the same samples, for ′^119mSn implanted into silicon single crystals. The implantation dose was varied between ∼10¹⁴ and ∼10¹⁷ atoms/cm², for target temperatures of 2O°C and 400°C. The channeling results in hot implants show that Sn is embedded substitutionally, and the Mössbauer parameters are nearly dose independent in the range indicated above. Except for a very low-dose implant (∼10¹³ atoms/cm²) the room-temperature implants lead to complete damage (no channeling dip) and significantly different Mössbauer parameters. Subsequent annealing at 700°C, however, leads to values close to those characteristic of hot implants. The small dose dependence for hot implants, even for doses leading to ∼80% damage, as measured by channeling, indicates that the microscopic ordering is preserved.