Semiconductor Electron Detectors
- 1 January 1961
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Nuclear Science
- Vol. 8 (1), 50-53
- https://doi.org/10.1109/tns2.1961.4315798
Abstract
The properties of p-n junctions made by phosphorus diffusion in 12 000 Ω cm p-type silicon have been examined using the Chalk River π √2 ß -ray spectrometer as a source of monoenergetic electrons. With 200 V reverse bias the depletion layer is thick enough to absorb totally 350 keV electrons. Up to 1200 keV some of the electrons are scattered sufficiently to deposit all their energy in the junction. This results in a total absorption peak up to electron energies of 1.2 MeV. However, at this energy most of the electrons act like minimum ionizing particles and deposit 180 keV of energy in the junction.Keywords
This publication has 5 references indexed in Scilit:
- Silicon p-n Junction Radiation DetectorsIRE Transactions on Nuclear Science, 1960
- Silicon Junctions as Particle SpectrometersIRE Transactions on Nuclear Science, 1960
- Gold-germanium junctions as particle spectrometersProceedings of the IEE - Part B: Electronic and Communication Engineering, 1959
- Observation of Charged-Particle Reaction ProductsPhysical Review Letters, 1959
- Minimum noise pre-amplifier for fast ionization chambersIl Nuovo Cimento (1869-1876), 1956