Resonated GaAs FET devices for microwave switching

1 February 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (2), 198-204
https://doi.org/10.1109/t-ed.1981.20311

Abstract

Several designs of monolithic switches for X-band applications have been fabricated and tested. These switches, which consist of two parallel-resonated GaAs FET's in a series SPDT configuration, have very low dc power dissipation, low insertion loss, and are bidirectional. An insertion loss of 0.7 dB with 28-dB isolation at 10.2 GHz has been measured for these devices. A simple equivalent circuit model is presented which explains reasonably well the basic features of resonated GaAs FET switches. The tradeoffs between performance and bandwidth, and the important design criteria, particularly with respect to the layout of monolithic inductors, are investigated.

Keywords

SWITCHES
ENERGY DISSIPATION
GALLIUM ARSENIDE
INTEGRATED CIRCUIT
EQUIVALENT CIRCUIT
INSERTION LOSS
POWER DISSIPATION
EQUIVALENT CIRCUITS
FIELD EFFECT TRANSISTOR

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