Defects in solid phase and laser crystallised polysilicon thin film transistors
- 1 May 1998
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 227-230, 1207-1212
- https://doi.org/10.1016/s0022-3093(98)00279-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline siliconPhilosophical Magazine Part B, 1988
- Exponential band tails in polycrystalline semiconductor filmsPhysical Review B, 1985
- Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous SemiconductorsJapanese Journal of Applied Physics, 1982
- Grain boundary states and the characteristics of lateral polysilicon diodesSolid-State Electronics, 1982
- Amorphous silicon-silicon nitride thin-film transistorsApplied Physics Letters, 1981
- Energy distribution of trapping states in polycrystalline siliconJournal of Applied Physics, 1980