Temperature Dependence of Ionization Rates in GaAs
- 1 December 1969
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (13), 5392-5394
- https://doi.org/10.1063/1.1657402
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORSApplied Physics Letters, 1966
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- Crystal Dynamics of Gallium ArsenidePhysical Review B, 1963
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962