High Indium Content Ingan Films and Quantum Wells.
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Luminescences from localized states in InGaN epilayersApplied Physics Letters, 1997
- Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy compositionApplied Physics Letters, 1997
- Study of indium droplets formation on the InxGa1−xN films by single crystal x-ray diffractionJournal of Electronic Materials, 1997
- Study of GaN and InGaN films grown by metalorganic chemical vapour depositionJournal of Crystal Growth, 1997
- Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour depositionJournal of Crystal Growth, 1997
- Solid phase immiscibility in GaInNApplied Physics Letters, 1996
- Growth and characterization of bulk InGaN films and quantum wellsApplied Physics Letters, 1996
- The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPEMRS Proceedings, 1996
- First-principles calculation of alloy phase diagrams: The renormalized-interaction approachPhysical Review B, 1989
- Chemical ordering in GaxIn1−xP semiconductor alloy grown by metalorganic vapor phase epitaxyApplied Physics Letters, 1988