Formation of BiOi, BiCs, and BiBsHi defects in e-irradiated or ion-implanted silicon containing boron
- 28 July 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (4), 665-667
- https://doi.org/10.1063/1.1595728
Abstract
The local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitialboron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitancespectroscopy experiments on irradiated p- Si containing B. The levels observed at E c −0.23, E v +0.29, and E v +0.51 eV are assigned to B i O i , B i C s , and B i B s H i respectively. B i C s is passivated by one H atom. Evidence for the existence of B i C s has implications for mechanisms involved in the suppression of transient-enhanced diffusion of boron in ion-implanted Si by C.Keywords
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