6000-V gate turn-off thyristors (GTOs) with n-buffer and new anode short structure
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (6), 1491-1496
- https://doi.org/10.1109/16.81643
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- 8000 V 1000 A gate turn-off thyristor with low on-state voltage and low switching lossPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 4.5 kV 3000 A high power reverse conducting gate turn-off thyristorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Gate Turn-Off ThyristorsPublished by Springer Nature ,1982