Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (8), 1359-1367
- https://doi.org/10.1109/t-ed.1980.20040
Abstract
The LDD structure, where narrow, self-aligned n-regions are introduced between the channel and the n+source-drain diffusions of an IGFET to spread the high field at the drain pinchoff region and thus reduce the maximum field intensity, is analyzed. The design is shown, including optimization of the n-dimensions and concentrations and the boron channel doping profile and an evaluation of the effect of the series resistance of the n-regions on device transconductance. Characteristics of experimental devices are presented and compared to those of conventional IGFET's. It is shown that significant improvements in breakdown voltages, hot-electron effects, and short-channel threshold effects can be achieved allowing operation at higher voltage, e.g., 8.5 versus 5 V, with shorter source-drain spacings, e.g., 1.2 versus 1.5 µm. Alternatively, a shorter channel length could be used for a given supply voltage. Performance projections are shown which predict 1.7 × basic device/circuit speed enhancement over conventional structures. Due to the higher voltages and higher frequency operation, the higher performance results in an increase in power which must be considered in a practical design.Keywords
This publication has 12 references indexed in Scilit:
- Hot-electron emission in n-channel IGFETsIEEE Journal of Solid-State Circuits, 1979
- VLSI limitations from drain-induced barrier loweringIEEE Journal of Solid-State Circuits, 1979
- 1 /spl mu/m MOSFET VLSI technology. II. Device designs and characteristics for high-performance logic applicationsIEEE Journal of Solid-State Circuits, 1979
- 1 /spl mu/m MOSFET VLSI technology. IV. Hot-electron design constraintsIEEE Journal of Solid-State Circuits, 1979
- Evidence for impact-ionized electron injection in substrate of n-channel MOS structuresApplied Physics Letters, 1978
- Characterization of short and narrow channel effects for CAD-IGFET modelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Emission probability of hot electrons from silicon into silicon dioxideJournal of Applied Physics, 1977
- Hot-carrier instability in IGFET’sApplied Physics Letters, 1975
- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974
- A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate OxideJapanese Journal of Applied Physics, 1970