Abstract
The principles of a new direct-overwrite method for magneto-optical memory systems in which the conductive layer of the heatsink is magnetic with an in-plane easy axis parallel to the data tracks are investigated. Magnetic charge windows are created in the conductive layer along the data tracks on the flanks of the temperature profiles produced by the focussed laser energy. By varying the laser power, the charge and the associated field windows are modified and displaced with respect to the storage layer. Thus, the total field is reversed at the critical rim at which M in the storage layer is adjustable. Write fields larger than 40 kA/m can be realized.