The Effect of Applied Electric Field on Diffusion of Impurities in Gallium Arsenide
- 1 January 1967
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 19 (2), 705-714
- https://doi.org/10.1002/pssb.19670190221
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Growth of GaAs Crystals in the 〈111〉 Polar DirectionJournal of Applied Physics, 1960
- Diffusion, solubility, and electrical behavior of copper in gallium arsenideJournal of Physics and Chemistry of Solids, 1958