GaAs p-n junction formed in quantum wire crystals
- 10 February 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (6), 745-747
- https://doi.org/10.1063/1.106556
Abstract
A p‐n junction is formed for the first time in a cross‐sectional area of a GaAs wire crystal with a diameter of about 100 nm. Ultrafine cylindrical growth by metalorganic vapor phase epitaxy is employed for the fabrication. Current‐voltage and capacitance‐voltage characteristics confirm the formation of the p‐n junction in a narrow area at the midpoint of a wire crystal. Intensive light emission by current injection is observed at 77 K and even at room temperature. These results suggest that ultrafine optoelectronic devices with quantum‐size p‐n junction are possible.Keywords
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