Record values for high Hall mobility and for low compensation ratio of boron doped diamond by ion implantation are reported. These are achieved, following the suggestion by Prins, by low dose Boron implantation into cold diamond (−97 °C) and insitu rapid heating (1050 °C for 10 min) and by a further anneal at higher temperature (1450 °C for 10 min). Detailed evaluation of Hall effect data and of the temperature dependence of the resistivity over a wide temperature range (200 to 700 K) prove that this implantation/annealing scheme yields p‐type behavior of the implanted layer with the highest hole mobility (385 cm2/V s, at room temperature) and the lowest compensation ratio (0.05) ever reported for diamond doped by ion implantation.