Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics
- 4 June 2005
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 80, 210-213
- https://doi.org/10.1016/j.mee.2005.04.070
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Transport mechanisms in atomic-layer-deposited Al2O3 dielectricsApplied Physics Letters, 2004
- Experimental and theoretical investigation of nano-crystal and nitride-trap memory devicesIEEE Transactions on Electron Devices, 2001
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfacesApplied Surface Science, 2000
- Properties of Al2O3-films deposited on silicon by atomic layer epitaxyMicroelectronic Engineering, 1997