Abstract
We calculate the scattering time (which determines the conductivity) and the single-particle relaxation time (which determines the density of states) for a disordered two-dimensional electron gas in lowest order of the electron-impurity interaction. Analytical results and numerical results for remote impurity doping, homogeneous background doping, interface roughness scattering, and alloy disorder scattering in In1x GaxAs quantum wells are presented. Self-consistency effects are also included and provide a theoretical frame for estimating the validity of the results calculated in lowest order of the electron-impurity interaction. A logarithmic singularity is found for the single-particle relaxation time in the case of homogeneous background doping.