Diffusion in Indium Near the Melting Point
- 1 January 1952
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 20 (1), 13-17
- https://doi.org/10.1063/1.1700156
Abstract
Diffusion coefficients for the systems Tl204–In and In114–In have been measured in the solid state and in the neighborhood of the melting point. The measurements were made in both polycrystalline masses and in single crystals. For the polycrystalline samples a rapid, but not discontinuous, rise in the diffusion co‐efficient occurred about 0.5°C below the melting point. For the Tl204–In system in a single crystal the rise in D occurs just below the melting point. This indicates grain boundary melting in the polycrystalline sample. For the In114–In diffusion in a single crystal the rapid rise still occurred well below the melting point, indicating that increasing lattice disorder also contributes to the increase in D.Keywords
This publication has 2 references indexed in Scilit:
- Crystal boundaries in tinProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1940
- Certain Physical Properties of Single Crystals of Tungsten, Antimony, Bismuth, Tellurium, Cadmium, Zinc, and TinProceedings of the American Academy of Arts and Sciences, 1925