Simulation studies of silicon electro-optic waveguide devices

Abstract

Several silicon-on-insulator guided-wave structures have been analyzed as potential electro-optic waveguide modulators using the pisces-ii two-dimensional (2D) device simulation program. From the electron and hole concentration data, the 2D refractive index profile is obtained. The profile is then spatially averaged with respect to a 2D cosine representation of the guided-wave E field to obtain the effective modal index changes at 1.3 and 1.55 μm. The channel-waveguide devices studied include the metal-oxide-semiconductor (MOS) diode, and the one or two-gate metal-oxide-semiconductor field-effect transistor (MOSFET) with single-or double-transverse injection. The single-gate double-injection MOSFET modulator offers the most promise with 10−3 refractive index changes possible, changes comparable in size to the Pockels effect in LiNbO3 or GaAs.