One-µm n-channel silicon MOSFET's have been fabricated using ion-implantation techniques. The gate structures are self-aligned, with negligible overlapping capacitance. Because of low-temperature aspects of the ion-implantation and post-implantation annealing processes, they can be incorporated at any stage of the conventional silicon technology. The devices exhibit characteristics consistent with the inversion layer electron velocity saturation model. The transconductance in the saturation region is independent of the gate voltage and the channel length. For