Magnetic and transport properties of III–V based magnetic semiconductor (GaMn)As: Growth condition dependence
- 18 January 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (3), 398-400
- https://doi.org/10.1063/1.123082
Abstract
We have studied growth condition dependence of magnetic and transport properties of magnetic semiconductor (GaMn)As grown by low-temperature molecular-beam epitaxy (LT-MBE). With increasing substrate temperature and decreasing As overpressure during the growth of (Ga1−xMnx)As with x=0.043, the hole concentration increased, the conduction behavior changed from semiconducting to metallic, and the ferromagnetic transition temperature became higher. This is explained by a decrease in the compensation of Mn acceptors by the reduction of excess As related defects in the LT-MBE grown (GaMn)As. Our experimental results indicate that the selection of the MBE growth parameters is very important for better controlling the electronic and magnetic properties of (GaMn)As.Keywords
This publication has 9 references indexed in Scilit:
- Epitaxial growth and properties of III–V magnetic semiconductor (GaMn)As and its heterostructuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- III–V based magnetic(GaMnAs)/nonmagnetic(AlAs) semiconductor superlatticesApplied Physics Letters, 1997
- Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAsSolid State Communications, 1997
- (GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxyJournal of Crystal Growth, 1997
- Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAsJournal of Crystal Growth, 1997
- Magnetic and magnetotransport properties of new III-V diluted magnetic semiconductors: GaMnAsJournal of Applied Physics, 1997
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- Effect of As4/Ga flux ratio on electrical and optical properties of low-temperature GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1994
- Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniquesJournal of Applied Physics, 1992