A self-assembled single-electron tunneling transistor
- 26 April 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (17), 2546-2548
- https://doi.org/10.1063/1.123893
Abstract
A single-electron tunneling transistor was made by capturing a chemically synthesized gold cluster between two gold electrodes. The transistor had a quasiperiodic modulation of the current–voltage characteristics as a function of a gate voltage applied to an oxidized aluminum electrode at 4.2 K. The Coulomb blockade voltage for this device was 50 mV observed at 4.2 K and room temperature. The maximum observed blockade voltage was 200 mV for devices without gate.Keywords
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