Epitaxial growth of γ - Al2O3 layers on Si(111) using Al solid source and N2O gas molecular beam epitaxy

Abstract

High crystalline quality γ‐Al₂O₃ films were epitaxially grown on Si(111) substrates at low growth temperatures from 750 to 900 °C by Al solid source and N₂O gas molecular beam epitaxy. Very thin γ‐Al₂O₃ films grown at 850 °C showed streaky reflection high‐energy electron diffraction patterns. By in situ x‐ray photoelectron spectroscopy measurements, carbon contamination, as is seen in the films grown with Al(CH₃)₃ source, was not detected within the sensitivity. The stoichiometry of the growth films was found to be similar to that of Al₂O₃. Growth rates of epitaxial γ‐Al₂O₃ layers were found to decrease with increasing growth temperatures.