Fabrication and Characterization of Ferroelectric Poly(vinylidene fluoride–tetrafluoroethylene) Gate Field-Effect Transistor Memories

Abstract

Organic ferroelectric gate field-effect transistor (FET) memories have been fabricated using pentacene as the semiconductor and a poly(vinylidene fluoride–tetrafluoroethylene) [P(VDF–TeFE)] thin film as the ferroelectric gate. The P(VDF–TeFE) film is prepared by spin coating and annealing at 170 °C for 2.5 h, and pentacene is prepared by vacuum evaporation. The polarization–electric field (P–E) hysteresis of the P(VDF–TeFE) thin film is observed and enhanced by poling treatment. The obtained P _r of 4 µC/cm² is sufficient for controlling pentacene surface potential. Good memory characteristics are obtained in the P(VDF–TeFE) gate FET. For such a FET, the ON/OFF ratio of drain current is 830, the carrier mobility is 0.11 cm² V^-1 s^-1, and the memory retention is over 16 h.