The mechanical behavior of silicon during small-scale indentation
- 1 September 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (9), 881-887
- https://doi.org/10.1007/bf02652912
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Characterizing the hardness and modulus of thin films using a mechanical properties microprobeThin Solid Films, 1988
- An investigation of hardness and adhesion of sputter-deposited aluminum on silicon by utilizing a continuous indentation testJournal of Materials Research, 1988
- hcp to fcc transition in silicon at 78 GPa and studies to 100 GPaPhysical Review Letters, 1987
- A method for interpreting the data from depth-sensing indentation instrumentsJournal of Materials Research, 1986
- Contact MechanicsPublished by Cambridge University Press (CUP) ,1985
- Structural phase transitions in Si and Ge under pressures up to 50 GPaPhysics Letters A, 1984
- Hardness measurement at penetration depths as small as 20 nmPhilosophical Magazine A, 1983
- Static compression of silicon in the [100] and in the [111] directionsJournal of Applied Physics, 1980
- Indentation fracture: principles and applicationsJournal of Materials Science, 1975
- Pressure induced phase transitions in silicon, germanium and some III–V compoundsJournal of Physics and Chemistry of Solids, 1962