Channeling in Iron and Lattice Location of Implanted Xenon

Abstract

We have studied heavy-ion (${}_{}{}^4{}_{}{}^{}\mathrm{He}$, ${}_{}{}^{12}{}_{}{}^{}\mathrm{C}$, ${}_{}{}^{14}{}_{}{}^{}\mathrm{N}$) channeling in carefully prepared iron single crystals. Angular distributions and critical angles in good agreement with the Lindhard theory were obtained. ${}_{}{}^{131,132}{}_{}{}^{}\mathrm{Xe}$ was implanted into the iron crystal at 100 or 200 keV in a random direction at doses of (1-100) × ${10}^{14}$ atoms/${\mathrm{cm}}^2$. In all cases, some radiation damage was evident from an increase in the minimum channeling yield. Typically (50 ± 10)% of implanted Xe was found to be at lattice sites at low doses, while most of the atoms were not substitutional at higher doses. Annealing at 450 °C reduced the substitutional fraction; annealing at 300 °C did not. These data are compared with Mössbauer-effect studies of hyperfine fields on Cs in iron.