The effect of bypass flows on heteroepitaxial growth of ZnS on GaP
- 1 May 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 33 (2), 372-376
- https://doi.org/10.1016/0022-0248(76)90067-1
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- The epitaxial growth of thick smooth films of ZnS on GaAsJournal of Crystal Growth, 1975
- Contamination of CdS heteroepitaxial layers during vapour growth on GaAs substratesJournal of Crystal Growth, 1972
- An optical image storage and processing device using electrooptic ZnSIEEE Transactions on Electron Devices, 1971