Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate
- 15 December 2004
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 96 (12), 7108-7111
- https://doi.org/10.1063/1.1812362
Abstract
Oxygen radicals pregrowth treatment and surface nitridation were used to eliminate Zn-polar inversion domains and control the growth of single-domain O-polar ZnO film on sapphire (0001) substrate by rf plasma-assisted molecular beam epitaxy. We found that the formation of oxygen-terminated sapphire surface prior to nitridation is crucial for achieving the anion polarity in subsequent AlN and ZnO layers, as demonstrated by formation of the surface reconstruction during ZnO growth and ex situ polarity determination. This method, in general, can be applied to growth of other polar films, such as II-VI oxides and III-V nitrides, on sapphire (0001) substrates.
Keywords
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