Measurement of Minority Carrier Lifetime in Germanium
- 1 November 1952
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 40 (11), 1420-1423
- https://doi.org/10.1109/jrproc.1952.273973
Abstract
A method for measuring the lifetime of minority carriers in germanium is described. Basically, it consists of liberating the carriers optically on a flat face of a crystal and measuring the concentration of minority carriers as a function of distance from the point of liberation. The mathematical model is analyzed and experimental results are presented here.Keywords
This publication has 3 references indexed in Scilit:
- Electrons, Holes, and TrapsProceedings of the IRE, 1958
- The Mobility and Life of Injected Holes and Electrons in GermaniumPhysical Review B, 1951
- Theory of Relation between Hole Concentration and Characteristics of Germanium Point ContactsBell System Technical Journal, 1950