Analysis of Rb and Cs implantations in silicon by channeling and hall effect measurements
- 31 October 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (10), 1357-1362
- https://doi.org/10.1016/0038-1101(70)90168-1
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Technique used in Hall effect analysis of ion implanted Si and GeSolid-State Electronics, 1970
- Hall effect measurements on Sb and Ga implanted silicon; Anneal behavior and comparison with other speciesSolid-State Electronics, 1970
- Electrical Behavior of Group III and V Implanted Dopants in SiliconJournal of Applied Physics, 1969
- A gas-release study of the annealing of bombardment-induced disorder∗ (studies on bombardment-induced disorder—I)Journal of Physics and Chemistry of Solids, 1969
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- Implantation and channeling effects of alkali ion beams in semiconductorsNuclear Instruments and Methods, 1965
- Silicon heavily doped by energetic cesium ionsJournal of Physics and Chemistry of Solids, 1963