FandF+Centers and Free-Carrier Absorption in BaO

Abstract
The F and F+ bands in BaO at 77°K are observed to be at 2.3 and 2.0 eV, respectively. The ground state for the F centers is about 0.1 eV below the conduction band. Above 77°K the F centers are partially ionized so that the observed band is composite. The released electrons give rise to a free-carrier absorption in the near infrared. The configuration-coordinate diagram shows a barrier to recombination, and recombination by tunneling is observed. These F centers are believed to be the long sought-after donors in oxide-coated cathodes.