Stable complementary inverters with organic field-effect transistors on Cytop fluoropolymer gate dielectric

Abstract

We present results on small-molecule p - and n -type organic semiconductors in combination with the highly water repellent fluoropolymer Cytop™ as the gate dielectric. Using pentacene and N , N ′ -ditridecylperylene-3,4,9,10-tetracarboxylicdiimide ( PTCDI-C 13 ) , we fabricated complementary inverters of high electrical quality and stability that are almost unaffected by repeated gate bias stress. The combined p - and n -type field-effect transistors show nearly ideal characteristics, very small hysteresis, and similar saturation mobility ( ∼ 0.2 cm 2 / V s ) . Particularly PTCDI-C 13 thin-film transistors exhibit a remarkable performance in the subthreshold regime if chromium is used as contact material for electron injection: a near zero onset and a subthreshold swing as low as 0.6 V/decade.