Unidirectional contraction in boron-implanted laser-annealed silicon
- 15 June 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (12), 801-803
- https://doi.org/10.1063/1.89936
Abstract
The lattice contraction in boron‐implanted laser‐annealed silicon has been studied by x‐ray Bragg reflection profiles and ion channeling. The contraction was shown to be one dimensional, along the surface normal, for strains as large as 1.3%.Keywords
This publication has 4 references indexed in Scilit:
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- Asymmetric X-ray Bragg reflexion and shallow strain distribution in silicon single crystalsJournal of Applied Crystallography, 1977
- Determination of strain distributions from X-ray Bragg reflexion by silicon single crystalsActa Crystallographica Section A, 1977
- Conditions for the Generation of Slip by Diffusion of Phosphorus into SiliconJournal of Applied Physics, 1966