Characterization and Screening of SiO2 Defects in EEPROM Structures
- 1 April 1983
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 8th Reliability Physics Symposium
- No. 07350791,p. 248-256
- https://doi.org/10.1109/irps.1983.361991
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Time-Zero Dielectric Reliability Test by a Ramp Method8th Reliability Physics Symposium, 1981
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969